1 C3D06060G rev. g, 01-2016 C3D06060Gsilicon carbide schottky diode z -rec ? rectifier features ? 600-volt schottky rectiier ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeficient on v f beneits ? replace bipolar with unipolar rectiiers ? essentially no switching losses ? higher eficiency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-263-2 maximum ratings (t c = 25 ?c unless otherwise speciied) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v fig. 3 i f continuous forward current 19 96 a t c =25?c t c =135?c t c =154?c i frm repetitive peak forward surge current 3020 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave i fsm non-repetitive peak forward surge current 6349 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave fig. 8 i fsm non-repetitive peak forward surge current 540460 a t c =25?c, t p = 10 s, pulse t c =110?c, t p = 10 s, pulse fig. 8 p tot power dissipation 9139 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c pin 1pin 2 case part number package marking C3D06060G to-263-2 c3d06060 v rrm = 600 v i f ( t c =135?c) = 9.5 a q c = 16 nc downloaded from: http:///
2 C3D06060G rev. g, 01-2016 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.52.0 1.72.4 v i f = 6 a t j =25c i f = 6 a t j =175c fig. 1 i r reverse current 6.5 13 33 132 a v r = 600 v t j =25c v r = 600 v t j =175c fig. 2 q c total capacitive charge 15 nc v r = 400 v, i f = 6 a d i /d t = 500 a/s t j = 25c fig. 5 c total capacitance 295 28.525.5 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 2.3 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r q jc thermal resistance from junction to case 1.65 c/w typical performance 8 12 16 20 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c t = 25 c 0 4 0 100 200 300 400 500 600 700 800 900 1000 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c figure 1. forward characteristics figure 2. reverse characteristics 6 8 10 12 14 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 2 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) downloaded from: http:///
3 C3D06060G rev. g, 01-2016 30 40 50 60 70 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 10 20 25 50 75 100 125 150 175 figure 3. current derating figure 4. power derating 40 50 60 70 80 90 100 0 10 20 30 25 50 75 100 125 150 175 figure 5. total capacitance charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance 10 15 20 25 capacitive charge, q c (nc) conditions: t j = 25 c 0 5 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 150 200 250 300 350 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 100 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) downloaded from: http:///
4 C3D06060G rev. g, 01-2016 2 3 4 5 6 capacitance stored energy, e c ( ? j) 0 1 2 0 100 200 300 400 500 600 700 capacitance stored energy, e reverse voltage, v r (v) typical performance 100 1,000 i fsm (a) t j_initial = 25 c t j_initial = 110 c 10 10e-6 100e-6 1e-3 10e-3 time, t p (s) figure 7. capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) v r (v) e c ( m j) figure 9. transient thermal impedance 100e-3 1 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 0.01 thermal resistance (?c/w) t (sec) downloaded from: http:///
5 C3D06060G rev. g, 01-2016 part number package marking C3D06060G to-263-2 c3d06060 to-263-2 note: recommended soldering proiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 10.668 15.990 2.540 1.540 8.890 3.556 tjb may 2015 mx+di recommended solder pad layout pos inches millimeters min max min max a 0.17 0.18 4.32 4.57 a1 - 0.01 - 0.25 b 0.028 0.037 0.71 0.94 b2 0.045 0.055 1.15 1.4 c 0.014 0.025 0.356 0.635 c2 0.048 0.055 1.22 1.4 d 0.35 0.37 8.89 9.4 d1 0.255 0.324 6.48 8.23 e 0.395 0.405 10.04 10.28 e1 0.31 0.318 7.88 8.08 e 0.1 bsc. 2.54 bsc. l 0.58 0.62 14.73 15.75 l1 0.09 0.11 2.29 2.79 l2 0.045 0.055 1.15 1.39 l3 0.05 0.07 1.27 1.77 q 0 8 0 8 package dimensions package to-263-2 pin 1 pin 2 case note: tab m may not be present m downloaded from: http:///
6 6 C3D06060G rev. g, 01-2016 copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the thresh- old limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfspeed representative or from the product ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree represen- tative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac deibrillato rs or similar emergency medical equipment, aircraft navigation or communication or control systems, or air trafic control systems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/diodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links diode model v t r t note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t + if * r t v t = 0.96 + (t j * -1.1*10 -3 ) r t = 0.07 + (t j * 7.4*10 -4 ) downloaded from: http:///
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